this is information on a product in full production. february 2015 docid025756 rev 2 1/9 9 T1610T-8FP 16 a logic level triac datasheet ? production data features ? medium current triac ? three triggering quadrants triac ? ecopack ? 2 compliant component ? complies with ul standards (file ref: e81734) ? 16 a high performance triac: ? high t j family ? high di/dt family ? high dv/dt family ? insulated package to-220fpab: ? insulated voltage: 2000 v rms applications ? general purpose ac line load switching ? motor control circuits ? small home appliances ? lighting ? inrush current limiting circuits ? overvoltage crowbar protection description available in through-hole fullpack package, the T1610T-8FP triac can be used for the on/off or phase angle control function in general purpose ac switching. this device can be directly driven by a microcontroller thanks to its 10 ma gate current requirement. provide ul certified insulation rated at 2000 v rms . $ $ * $ $ $ * 7 2 ) 3 $ % table 1. device summary symbol value unit i t(rms) 16 a v drm , v rrm 800 v v dsm , v rsm 900 v i gt 10 ma www.st.com
characteristics T1610T-8FP 2/9 docid025756 rev 2 1 characteristics table 2. absolute ratings (limiting values, t j = 25 c unless otherwise stated) symbol parameter value unit i t(rms) on-state rms current (full sine wave) t c = 87 c 16 a i tsm non repetitive surge peak on-state current (full cycle, t j initial = 25 c) f = 50 hz t = 20 ms 120 a f = 60 hz t = 16.7 ms 126 i 2 ti 2 t value for fusing, t j initial = 25 c t p = 10 ms 95 a 2 s v drm , v rrm repetitive surge peak off-state voltage t j = 150 c 600 v t j = 125 c 800 v dsm , v rsm non repetitive surge peak off-state voltage t p = 10 ms 900 v di/dt critical rate of rise of on-state current i g = 2 x i gt , t r 100 ns f = 100 hz 100 a/s i gm peak gate current t p = 20 s t j = 150 c 4 a p g(av) average gate power dissipation t j = 150 c 1 w t stg t j storage junction temperature range operating junction temperature range - 40 to + 150 - 40 to + 150 c t l maximum lead temperature for soldering during 10 s 260 c v ins insulation rms voltage, 1 minute 2 kv table 3. electrical characteristics (t j = 25 c, unless otherwise specified) symbol test conditions quadrant value unit i gt v d = 12 v, r l = 30 ? i - ii - iii min. 0.5 ma max. 10 v gt v d = 12 v, r l = 30 ? i - ii - iii max. 1.3 v v gd v d = v drm , r l = 3.3 k ? t j = 150 c i - ii - iii min. 0.2 v i h (1) 1. for both polarities of a2 referenced to a1 i t = 500 ma max. 15 ma i l i g = 1.2 i gt i - iii max. 20 ma ii 25 dv/dt (1) v d = v r = 536 v, gate open t j = 125 c min. 250 v/s v d = v r = 402 v, gate open t j = 150 c 170 v/s (di/dt)c (1) (dv/dt)c = 0.1 v/s t j = 125 c min. 21.6 a/ms t j = 150 c 15.1 (di/dt)c (1) (dv/dt)c = 10 v/s t j = 125 c min. 11.3 a/ms t j = 150 c 5.0
docid025756 rev 2 3/9 T1610T-8FP characteristics table 4. static characteristics symbol test conditions value unit v t (1) i tm = 22.6 a, t p = 380 s t j = 25 c max. 1.55 v v t0 (1) threshold voltage t j = 150 c max. 0.85 v r d (1) dynamic resistance t j = 150 c max. 27 m i drm i rrm v drm = v rrm = 800 v t j = 25 c max. 7.5 a t j = 125 c 1 ma v drm = v rrm = 600 v t j = 150 c max. 3.0 1. for both polarities of a2 referenced to a1 table 5. thermal resistance symbol parameter value unit r th(j-c) junction to case (ac) 3.3 c/w r th(j-a) junction to ambient (dc) 60 c/w figure 1. maximum power dissipation versus on-state rms current (full cycle) figure 2. on-state rms current versus case temperature (full cycle) p(w) 0 2 4 6 8 10 12 14 16 18 20 0246810121416 i (a) t(rms) 180 i (a) t(rms) 0 2 4 6 8 10 12 14 16 18 0 25 50 75 100 125 150 t (c) c figure 3. on-state rms current versus ambient temperature (free air convection) figure 4. relative variation of thermal impedance versus pulse duration i (a) t(rms) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 t (c) a k = [z th / r th ] 1.0e-02 1.0e-01 1.0e+00 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 1.0e+03 1.0e+04 t p (s) z th(j-a) z th(j-c)
characteristics T1610T-8FP 4/9 docid025756 rev 2 figure 5. on-state characteristics (maximum values) figure 6. surge peak on-state current versus number of cycles i (a) tm 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 t j =25 c t j =150 c v(v) tm t max: j v = 0.85 v to r = 27 m d i (a) tsm 0 10 20 30 40 50 60 70 80 90 100 110 120 130 1 10 100 1000 repetitive t = 87 c c number of cycles non repetitive t initial = 25 c j one cycle t = 20 ms figure 7. non repetitive surge peak on-state current and corresponding values of i 2 t (half cycle) figure 8. relative variation of gate trigger current and gate voltage versus junction temperature (typical values) i (a), i2t (a2s) tsm 10 100 1000 10000 0.01 0.10 1.00 10.00 sinusoidal pulse with width t <10 ms p t (ms) p t initial = 25 c j i tsm i2t dl/dt limitation: 100 a / s 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 i g t ,v gt [t j ]/i gt ,v gt [t j =25 c] i gt q1-q2 i gt q3 v gt t (c) j t (c) j figure 9. relative variation of static dv/dt immunity versus junction temperature (typical values) figure 10. relative variation of holding and latching current versus junction temperature (typical values) t (c) j 0 1 2 3 4 5 25 50 75 100 125 150 dv/dt [t j ]/dv/dt[t j =150 c] v d = v r = 402 v ; 150c v d = v r = 536 v ; 125c t (c) j t (c) j t (c) j i h ,i l [t j ]/i h ,i l [t j =25 c] 0.0 0.5 1.0 1.5 2.0 -50 -25 0 25 50 75 100 125 150 i h i l
docid025756 rev 2 5/9 T1610T-8FP characteristics figure 13. relative variation of leakage current versus junction temperature for different values of blocking voltage (typical values) figure 11. relative variation of critical rate of decrease of main current (di/dt)c versus reapplied (dv/dt)c (typical values) figure 12. relative variation of critical rate of decrease of main current (di/dt)c versus junction temperature (typical values) 0 1 2 3 0.1 1.0 10.0 100.0 (di/dt)c [ (dv/dt)c ] / specified (di/dt)c t t j j = 150 = 125 c c (dv/dt)c (v/s) 0 1 2 3 4 5 6 7 8 25 50 75 100 125 150 (di/dt) c [t j ] / (di/dt) c [t j =150 c] (dv/dt)c = 10 v/s t (c) j 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 25 50 75 100 125 150 v drm =v rrm =800 v v drm =v rrm =600 v v drm =v rrm =400 v t (c) j i , i @ [t ; v , v ] / i , i drm rrm j drm rrm drm rrm [t j max = 125 c; 800 v] [t j max = 150 c; 600 v] * i drm , i rrm at:
package information T1610T-8FP 6/9 docid025756 rev 2 2 package information ? epoxy meets ul94, v0 ? lead-free package ? recommended torque: 0.4 to 0.6 nm in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. figure 14. to-220fpab dimension definitions h a b dia l7 l6 l5 f1 f2 f d e l4 g1 g l2 l3
docid025756 rev 2 7/9 T1610T-8FP package information table 6. to-220fpab dimension values ref. dimensions millimeters inches min. max. min. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.70 0.018 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.70 0.045 0.067 f2 1.15 1.70 0.045 0.067 g 4.95 5.20 0.195 0.205 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 typ. 0.63 typ. l3 28.6 30.6 1.126 1.205 l4 9.8 10.6 0.386 0.417 l5 2.9 3.6 0.114 0.142 l6 15.9 16.4 0.626 0.646 l7 9.00 9.30 0.354 0.366 dia. 3.00 3.20 0.118 0.126
ordering information T1610T-8FP 8/9 docid025756 rev 2 3 ordering information figure 15. ordering information scheme 4 revision history table 7. ordering information order code marking package weight base qty delivery mode T1610T-8FP T1610T-8FP to-220fpab 2.0 g 50 tube t 16 10 t - 8 fp triac current 16 = 16 a gate sensitivity 10 = 10 ma specific application t = increased (di/dt)c and dv/dt producing reduced i tsm voltage (v drm , v rrm ) 8 = 800 v package fp = to-220fpab table 8. document revision history date revision changes 05-feb-2014 1 initial release. 12-feb-2015 2 updated features and table 2 .
docid025756 rev 2 9/9 T1610T-8FP important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics ? all rights reserved
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